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| PD - 95269 IRF7842PBF HEXFET(R) Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg (typ.) 33nC 40V 5.0m:@VGS = 10V A A D D D D S S S G 1 8 7 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 20 18 14 140 2.5 1.6 0.02 -55 to + 150 Units V f f c A W Linear Derating Factor Operating Junction and Storage Temperature Range W/C C Thermal Resistance RJL RJA g fg Junction-to-Ambient Junction-to-Drain Lead Parameter Typ. --- --- Max. 20 50 Units C/W Notes through are on page 9 www.irf.com 1 09/21/04 IRF7842PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 40 --- --- --- 1.35 --- --- --- --- --- 81 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.037 4.0 4.7 --- - 5.6 --- --- --- --- --- 33 9.6 2.8 10 10.6 12.8 18 1.3 14 12 21 5.0 4500 680 310 --- --- 5.0 5.9 2.25 --- 1.0 150 100 -100 --- 50 --- --- --- --- --- --- TBD --- --- --- --- --- --- --- pF VGS = 0V VDS = 20V ns nC nC VDS = 20V VGS = 4.5V ID = 14A S nA V mV/C A V m Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 17A VGS = 4.5V, ID = 14A V/C Reference to 25C, ID = 1mA e e VDS = VGS, ID = 250A VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 20V, ID = 14A VDS = 16V, VGS = 0V VDD = 20V, VGS = 4.5V ID = 14A Clamped Inductive Load e = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Typ. --- --- Max. 50 14 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 99 11 3.1 A 140 1.0 150 17 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 14A, VGS = 0V TJ = 25C, IF = 14A, VDD = 20V di/dt = 100A/s e e 2 www.irf.com IRF7842PBF 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 2.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () ID = 18A VGS = 10V 100.0 1.5 T J = 150C 10.0 T J = 25C 1.0 1.0 VDS = 25V 60s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7842PBF 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12 ID= 14A 10 8 6 4 2 0 VDS= 30V VDS= 20V C, Capacitance (pF) 10000 Ciss 1000 Coss Crss 100 1 10 100 0 20 40 60 80 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 150C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 1000 10msec 1.0 T J = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7842PBF 18 2.4 VGS(th) Gate threshold Voltage (V) 16 14 2.0 ID , Drain Current (A) 12 10 8 6 4 2 0 25 50 75 100 125 150 ID = 250A 1.6 1.2 0.8 0.4 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature (C) T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature 100 10 Thermal Response ( Z thJA ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 0.1 J 0.01 1 2 Ri (C/W) i (sec) 10.48 0.138167 26.83 1.8582 12.69 44.8 Ci= i/Ri Ci= i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 0.0001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7842PBF RDS(on), Drain-to -Source On Resistance ( m) 16 200 EAS, Single Pulse Avalanche Energy (mJ) ID = 18A 12 160 ID 6.7A 7.5A BOTTOM 14A TOP 120 8 T J = 125C 4 80 TJ = 25C 0 2.0 4.0 6.0 8.0 10.0 40 0 25 50 75 100 125 150 VGS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature (C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current LD VDS 15V VDS L DRIVER + VDD - RG VGS 20V D.U.T IAS tp + V - DD A D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 0.01 Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms 6 www.irf.com IRF7842PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform www.irf.com 7 IRF7842PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A A1 b INCHES MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT E S : 1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIME T ER 3. DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHES ]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006]. 6 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010]. 7 DIME NS ION IS T HE LE NGT H OF LE AD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DE S IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT E RNAT IONAL RECT IF IER LOGO XXXX F 7101 8 www.irf.com IRF7842PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.5mH RG = 25, IAS = 14A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 www.irf.com 9 |
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